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GT0513 Gate Driver Transformer with 4000Vrms Basic Isolation, Push-Pull Topology & AEC-Q200 Compliance for IGBT and MOSFET Gate Drive

    Buy cheap GT0513 Gate Driver Transformer with 4000Vrms Basic Isolation, Push-Pull Topology & AEC-Q200 Compliance for IGBT and MOSFET Gate Drive from wholesalers
     
    Buy cheap GT0513 Gate Driver Transformer with 4000Vrms Basic Isolation, Push-Pull Topology & AEC-Q200 Compliance for IGBT and MOSFET Gate Drive from wholesalers
    • Buy cheap GT0513 Gate Driver Transformer with 4000Vrms Basic Isolation, Push-Pull Topology & AEC-Q200 Compliance for IGBT and MOSFET Gate Drive from wholesalers

    GT0513 Gate Driver Transformer with 4000Vrms Basic Isolation, Push-Pull Topology & AEC-Q200 Compliance for IGBT and MOSFET Gate Drive

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    Delivery Time : 2~8weeks
    Certification : RoHS/ISO/UL/CE/IATF16949/CNAS
    Model Number : GT0513
    Payment Terms : L/C,T/T
    Brand Name : SHINHOM
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    GT0513 Gate Driver Transformer with 4000Vrms Basic Isolation, Push-Pull Topology & AEC-Q200 Compliance for IGBT and MOSFET Gate Drive

    GT0513 Gate Driver Transformer – High‑Reliability Push‑Pull for IGBT, MOSFET & BMS Isolation
    The GT0513 gate driver transformer is a compact push‑pull transformer built for IGBT and MOSFET gate drive and BMS isolation in automotive and industrial systems. Manufactured under IATF16949 and conforming to AEC‑Q200, this isolation transformer delivers stable performance from -40°C to +105°C.
    Key Features
    • 4000Vrms basic isolation (600Vrms continuous) with high creepage - ensures safe galvanic separation between primary and secondary circuits
    • Push‑pull topology - ideal for high‑frequency isolated gate drive and DC‑DC converters
    • Multiple turns ratios - from 1CT:1.2CT up to 1CT:7CT, supporting various gate voltage levels
    • Low leakage inductance - 200‑350nH typ., tested at 100kHz
    • Minimum primary inductance - 200µH for efficient energy transfer
    • Very low DCR - as low as 0.13Ω on primary, reducing conduction loss
    • Low interwinding capacitance - ≤159pF, minimizing signal distortion
    • Open‑frame, non‑encapsulated design - easy PCB mounting, excellent thermal performance
    Applications
    • IGBT / MOSFET gate drive in EV/HEV inverters
    • BMS isolation (main & redundant communication)
    • Push‑pull and flyback isolated power supplies
    • DC‑DC converters requiring reinforced insulation
    For a reliable gate driver transformer in space‑constrained, high‑temperature environments, the GT0513 isolation transformer is the proven choice. Its push‑pull architecture and AEC‑Q200 compliance make it especially suitable for automotive battery management and onboard charger systems.
    Quality GT0513 Gate Driver Transformer with 4000Vrms Basic Isolation, Push-Pull Topology & AEC-Q200 Compliance for IGBT and MOSFET Gate Drive for sale
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